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家へ > 製品 > シリコンカービード セラミックス > Silicon Carbide Ceramics Offering Thermal Shock Resistance And High Temperature Stability For In Semiconductor Crystal Growth Furnaces

Silicon Carbide Ceramics Offering Thermal Shock Resistance And High Temperature Stability For In Semiconductor Crystal Growth Furnaces

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起源の場所: CN

ブランド名: Dayoo

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最小注文数量: カスタマイズされた

価格: CNY

パッケージの詳細: パッケージ

受渡し時間: 60営業日

供給の能力: 工場

最高 の 価格 を 入手 する
ハイライト:

silicon carbide ceramics thermal shock resistance

,

high temperature stability silicon carbide ceramics

,

semiconductor crystal growth furnace ceramics

弾性率:
300-330 Gpa
加工サービス:
カスタム処理
コンテンツ:
99% SIC
材料:
シリコンカービード (SiC)
密度:
3.1 - 3.2 G/cm3
化学的惰性:
高い
耐摩耗性:
素晴らしい
製品フォーム:
ディスクロール
曲げ強度:
300~550MPa
製造方法:
焼結、反応接合、ホットプレス
アドバンテージ:
高温耐性
曲げ強度:
450 Mpa
マイクロン:
150
品質管理:
全数検査
特徴:
高温耐性
弾性率:
300-330 Gpa
加工サービス:
カスタム処理
コンテンツ:
99% SIC
材料:
シリコンカービード (SiC)
密度:
3.1 - 3.2 G/cm3
化学的惰性:
高い
耐摩耗性:
素晴らしい
製品フォーム:
ディスクロール
曲げ強度:
300~550MPa
製造方法:
焼結、反応接合、ホットプレス
アドバンテージ:
高温耐性
曲げ強度:
450 Mpa
マイクロン:
150
品質管理:
全数検査
特徴:
高温耐性
Silicon Carbide Ceramics Offering Thermal Shock Resistance And High Temperature Stability For In Semiconductor Crystal Growth Furnaces
Silicon Carbide Ceramics for Semiconductor Crystal Growth Furnaces
Product Overview

Silicon Carbide (SiC) Precision Ceramics are high-performance industrial ceramic materials manufactured using high-purity SiC powder (purity ≥ 98%) through advanced forming and high-temperature sintering processes. These materials provide exceptional thermal shock resistance, high temperature stability, and strong corrosion resistance, making them essential components for high-end industrial thermal equipment operating in extreme conditions from 1600-1900°C.

Core Applications
  • High-Temperature Furnace Linings: Suitable for SiC sintering furnaces, vacuum/atmosphere sintering furnaces, glass melting kilns, and hazardous waste incinerators, providing high-temperature and corrosion-resistant inner lining protection
  • Thermocouple Protection Tubes: Used in semiconductor crystal growth furnaces, metal melting furnaces, and cemented carbide sintering furnaces, ensuring accurate operation of temperature measurement elements under reducing/inert atmospheres
Product Advantages
  • High-Temperature Resistance: Decomposition temperature >2500°C under atmospheric pressure; flexural strength at 1400°C remains over 70% of room temperature strength
  • Thermal Shock Resistance: Thermal expansion coefficient of 4.3-4.5×10⁻⁶/K, capable of withstanding sudden temperature fluctuations >500°C
  • Corrosion and Wear Resistance: Resistant to strong acids (except hydrofluoric acid), molten metals, and slag erosion; hardness ranges from 2400-2600 kg/mm²
  • Precision and Stability: High forming accuracy; pressureless sintered products achieve density ≥98%; excellent thermal conductivity (104-200 W/m*K)
Technical Specifications
Item Indicator
SiC Content ≥98%
Density 3.02-3.10 g/cm³
Maximum Operating Temperature 1900°C
Thermal Expansion Coefficient (25°C) 4.3×10⁻⁶/K
Flexural Strength (Room Temperature) ≥395 MPa
Hardness (HV) 2400-2600 kg/mm²
Porosity ≤0.1 vol% (Reaction Sintered)
Manufacturing Process

Raw Material Pretreatment (Purification → Ball Milling) → Forming (Isostatic Pressing / Slip Casting / Extrusion) → High-Temperature Sintering (1400-2200°C) → Precision Machining (Grinding → Polishing) → Performance Testing (Strength / Corrosion Resistance Testing) → Finished Product Packaging

Usage Instructions
  • Clean contact surfaces before installation to ensure no impurities
  • Avoid sudden cooling or heating; heating/cooling rates should be ≤5°C/min
  • Preheat to 80°C and maintain for 2 hours before use in low-temperature environments (<15°C)
  • Keep away from strongly corrosive media such as hydrofluoric acid
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